The coherent and incoherent components of the resonant secondary emission from GaAs quantum well structures after ultrashort excitation have been studied as a function of the excitation density, lattice temperature, and inhomogeneous broadening by means of interferometric correlation techniques. We find that the coherent emission is thermally quenched and saturates with the excitation power. A good agreement is found within a simple classical model based on the inhomogeneous broadening of the excitonic band, including the experimental excitonexciton and exciton-phonon induced dephasing.

Characterization of the ultrafast resonant secondary emission from GaAs quantum well

Simone Ceccherini;
1998

Abstract

The coherent and incoherent components of the resonant secondary emission from GaAs quantum well structures after ultrashort excitation have been studied as a function of the excitation density, lattice temperature, and inhomogeneous broadening by means of interferometric correlation techniques. We find that the coherent emission is thermally quenched and saturates with the excitation power. A good agreement is found within a simple classical model based on the inhomogeneous broadening of the excitonic band, including the experimental excitonexciton and exciton-phonon induced dephasing.
1998
Inglese
D. S. Citrin
Radiative Processes and Dephasing in Semiconductors
Workshop on Radiative Processes and Dephasing in Semiconductors
58
63
6
9781557525253
http://www.opticsinfobase.org/abstract.cfm?URI=RPDS-1998-RMD1
2-4 Febbraio 1998
Coeur d' Alene, Idaho
6
none
Gurioli, Massimo; Bogani, Franco; Capanni, Daniele; Colocci, Marcello; Ceccherini, Simone; Vinattieri, Anna
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/175704
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