By using scanning tunneling microscopy/spectroscopy we show that the interface between LaAlO3 and SrTiO3 band insulators is characterized by in-gap interface states. These features were observed in insulating as well as conducting LaAlO3/SrTiO3 bilayers. The data show how the interface density of states evolves across the insulating to metal transition, demonstrating that nanoscale electronic inhomogeneities in the system are induced by spatially localized electrons.
Photodoping and in-gap interface states across the metal-insulator transition in LaAlO3/SrTiO3 heterostructures
R Di Capua;F Chiarella;G M De Luca;M Salluzzo
2012
Abstract
By using scanning tunneling microscopy/spectroscopy we show that the interface between LaAlO3 and SrTiO3 band insulators is characterized by in-gap interface states. These features were observed in insulating as well as conducting LaAlO3/SrTiO3 bilayers. The data show how the interface density of states evolves across the insulating to metal transition, demonstrating that nanoscale electronic inhomogeneities in the system are induced by spatially localized electrons.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
