Interest in superconducting transistors is due to some potential benefits of these devices, such as the possibility to have large current gain and bandwidth at low temperatures. In this work we present experimental results concerning with a new superconducting 3-terminal device showing true transistor-lice properties at T=4.2K. It is a stacked double tunnel junction structure where the intermediate film is a bilayer of superconducting Nb with an Al quasiparticle trap which can be either in the superconducting or in the normal metal state. Current amplification factors of up to 2.0 are observed at a temperature of 4.2 K when the Al is superconducting. When the Al is in the normal State, large current gains of more than 50 are observed The operation is highly directional, i.e. practically no effect is observed when the roles of the injector and detector junctions are reversed. The results are explained according to the recently proposed QUAsiparticle TRApping TRANnsistor model.
Non-equilibrium in Josephson junctions: Possible transistor-like applications
2000
Abstract
Interest in superconducting transistors is due to some potential benefits of these devices, such as the possibility to have large current gain and bandwidth at low temperatures. In this work we present experimental results concerning with a new superconducting 3-terminal device showing true transistor-lice properties at T=4.2K. It is a stacked double tunnel junction structure where the intermediate film is a bilayer of superconducting Nb with an Al quasiparticle trap which can be either in the superconducting or in the normal metal state. Current amplification factors of up to 2.0 are observed at a temperature of 4.2 K when the Al is superconducting. When the Al is in the normal State, large current gains of more than 50 are observed The operation is highly directional, i.e. practically no effect is observed when the roles of the injector and detector junctions are reversed. The results are explained according to the recently proposed QUAsiparticle TRApping TRANnsistor model.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
