We present first principle molecular dynamics simulations for selected point defects on the (001) stoichiometric carbon terminated surface of cubic silicon carbide. In particular we investigated missing units and coordination defects. The results of our calculations are compared with recent experiments, in particular we discuss simulated STM images, which are in good agreement with measured ones.
Defects at the Carbon terminated SiC(001) surface
A Catellani;
2001
Abstract
We present first principle molecular dynamics simulations for selected point defects on the (001) stoichiometric carbon terminated surface of cubic silicon carbide. In particular we investigated missing units and coordination defects. The results of our calculations are compared with recent experiments, in particular we discuss simulated STM images, which are in good agreement with measured ones.File in questo prodotto:
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