A new fabrication process for three-terminal superconducting devices consisting of two Josephson junctions in a stacked configuration is reported. The process is based on the deposition of the whole Nb/AlxOy/Nb-Al/AlxOy/Nb multilayer on a Si crystalline wafer without any vacuum breaking. Lift-off techniques, anodization processes and a SiO film deposition have been adopted for patterning and insulating the two tunnel stacked junctions. Devices have been characterized in terms of current-voltage (I-V) curves and Josephson critical current vs. the externally applied magnetic field. They show high quality factors (V-m values up to 65 mV at 4.2 K), and good current uniformity.
Whole-wafer fabrication process for three-terminal double stacked tunnel junctions
2001
Abstract
A new fabrication process for three-terminal superconducting devices consisting of two Josephson junctions in a stacked configuration is reported. The process is based on the deposition of the whole Nb/AlxOy/Nb-Al/AlxOy/Nb multilayer on a Si crystalline wafer without any vacuum breaking. Lift-off techniques, anodization processes and a SiO film deposition have been adopted for patterning and insulating the two tunnel stacked junctions. Devices have been characterized in terms of current-voltage (I-V) curves and Josephson critical current vs. the externally applied magnetic field. They show high quality factors (V-m values up to 65 mV at 4.2 K), and good current uniformity.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
