We present first-principles calculations for the initial stages of etching of Si(100) by H atoms. We find that adsorbed SiH3 species [SiH3(a)] on the H-saturated Si(100)1 x 1 surface have a negative formation energy. Our results also indicate that the Si-Si backbond breaking which gives rise to the formation of these SiH3 (a) defects is possibly promoted by a bonding state between atomic hydrogen and silicon atoms in the second layer.
Theoretical study of SiH3-defect stability and formation on the H-saturated Si(100)1×1 surface
A Vittadini;
1992
Abstract
We present first-principles calculations for the initial stages of etching of Si(100) by H atoms. We find that adsorbed SiH3 species [SiH3(a)] on the H-saturated Si(100)1 x 1 surface have a negative formation energy. Our results also indicate that the Si-Si backbond breaking which gives rise to the formation of these SiH3 (a) defects is possibly promoted by a bonding state between atomic hydrogen and silicon atoms in the second layer.File in questo prodotto:
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