The charge trapping properties of HfO2 thin films for application in charge trap memories are investigated as a function of high-temperature postdeposition annealing (PDA) and oxide thickness in the TaN/Al2O3/HfO2/SiO2/Si structure. The trap density (NT) in HfO2, extracted by simulating the programming transient, is in the 1019-1020 cm(-3) range, and it is related to film thickness and PDA temperature. Diffusion phenomena in the stack play a significant role in modifying NT in HfO2 and the insulating properties of the Al2O3 layer. The memory performances for 1030 degrees C PDA are promising with respect to standard stacks featuring Si3N4.
Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories
Spiga S;Lamperti A;
2012
Abstract
The charge trapping properties of HfO2 thin films for application in charge trap memories are investigated as a function of high-temperature postdeposition annealing (PDA) and oxide thickness in the TaN/Al2O3/HfO2/SiO2/Si structure. The trap density (NT) in HfO2, extracted by simulating the programming transient, is in the 1019-1020 cm(-3) range, and it is related to film thickness and PDA temperature. Diffusion phenomena in the stack play a significant role in modifying NT in HfO2 and the insulating properties of the Al2O3 layer. The memory performances for 1030 degrees C PDA are promising with respect to standard stacks featuring Si3N4.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
