SiC(100) ordered film growth by C-60 decomposition on Si(100) surfaces

Fullerene (C-60) was deposited on Si(1 0 0) 2 x 1 double domain reconstructed substrate. The interface has been treated with annealing procedure in order to fragment the C-60 precursor and to induce covalent Si-C bond formation and to obtain carbidization. In this way SiC(1 0 0) films of thousands of Angstrom have been grown. Depending on the growth procedure different surface structures, 1 x 1 or 2 x 1, have been obtained. The different stages of growth has been checked by in situ low energy electron diffraction (LEED), and Auger spectroscopy. Ex situ we verified surface order by means of LEED technique, observing either a 1 x 1 or a 2 x 1 double domain reconstruction. We characterized electronic properties collecting valence band and core level spectra employing synchrotron radiation source. Valence band spectra showed evident electronic surface states similar to those revealed on SiC(1 0 0) surfaces grown by different techniques.