The transfer characteristics of polysilicon thin film transistors have been measured in the temperature range from 400 to 80 K. The active layer has been made by excimer laser crystallization of amorphous silicon. The devices show high field-effect mobility values ~.200 cm2/V s!, even at low temperature. The electrical characteristics have been analyzed using a uniformly distributed density of states ~DOS! model. The DOS has been derived using the values of the conductance at various temperatures. Using the DOS derived from the ''temperature method,'' we have calculated the transfer characteristics and the threshold voltage versus temperature, obtaining a very good agreement with experimental data.
Temperature dependence of the transfer characteristics of polysilicon thin film transistors fabricated by excimer laser crystallization
V Foglietti;L Mariucci;G Fortunato
1999
Abstract
The transfer characteristics of polysilicon thin film transistors have been measured in the temperature range from 400 to 80 K. The active layer has been made by excimer laser crystallization of amorphous silicon. The devices show high field-effect mobility values ~.200 cm2/V s!, even at low temperature. The electrical characteristics have been analyzed using a uniformly distributed density of states ~DOS! model. The DOS has been derived using the values of the conductance at various temperatures. Using the DOS derived from the ''temperature method,'' we have calculated the transfer characteristics and the threshold voltage versus temperature, obtaining a very good agreement with experimental data.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
