Two-terminal multistate memory elements based on VO2/TiO2 thin film microcantilevers are reported. Volatile and non-volatile multiple resistance states are programmed by current pulses at temperatures within the hysteretic region of the metal-insulator transition of VO2. The memory mechanism is based on current-induced creation of metallic clusters by self-heating of micrometric suspended regions and resistive reading via percolation.
Multistate Memory Devices Based on Free-standing VO2/TiO2 Microstructures Driven by Joule Self-Heating
Luca Pellegrino;Nicola Manca;Emilio Bellingeri;
2012
Abstract
Two-terminal multistate memory elements based on VO2/TiO2 thin film microcantilevers are reported. Volatile and non-volatile multiple resistance states are programmed by current pulses at temperatures within the hysteretic region of the metal-insulator transition of VO2. The memory mechanism is based on current-induced creation of metallic clusters by self-heating of micrometric suspended regions and resistive reading via percolation.File in questo prodotto:
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