A well characterized C-60 supersonic seeded beam has been used to synthesize SiC films on Si (111) 7x7, The control of beam parameters such as energy and flux distributions is shown to be important to improve quality of films in terms of morphology, defect density and structure. We demonstrate that a kinetic energy of a few eV of the C-60 precursor is enough to induce carbidization at moderate substrate temperature. Kinetic energy activated SiC formation at 750 degreesC is achieved with a strong reduction of the dimensions and density of defects. The films show a reduced roughness of about 2.5 nm (root mean square).
Synthesis of SiC on Si by seeded supersonic beams of fullerenes
2000
Abstract
A well characterized C-60 supersonic seeded beam has been used to synthesize SiC films on Si (111) 7x7, The control of beam parameters such as energy and flux distributions is shown to be important to improve quality of films in terms of morphology, defect density and structure. We demonstrate that a kinetic energy of a few eV of the C-60 precursor is enough to induce carbidization at moderate substrate temperature. Kinetic energy activated SiC formation at 750 degreesC is achieved with a strong reduction of the dimensions and density of defects. The films show a reduced roughness of about 2.5 nm (root mean square).File in questo prodotto:
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