CIGS phase diagram is very complex and the information from different characterizations has been extremely useful to optimize the growth conditions. The capability of PED to deposit CIGS films on Mo-coated SLG via PED technique, obtaining stoichiometric films by a "single-stage" route, will be discussed and motivated. The structural properties of the samples were characterized by XRD; morphological analysis of the samples was conducted by AFM, SEM, equipped with an EDS detector for compositional analysis and TEM. The growth temperature and the post-deposition thermal annealing influence on the Cu stoichiometry (which can be used for [Cu] grading along the film growth axis), the preferential out-of-plane orientation of CIGS grains, and the morphological properties and grain size, are reported. Raman spectroscopy has been used to detect secondary phases, whilst XPS and SIMS measurements were utilized to check "wanted" (Na from SL glass) and "unwanted" contaminations (i.e., Al from the Al2O3 beam guide). Combined TRPL and DLTS measurements provide hints on defects related to stoichiometric variations.

A new method to deposit CIGS for Thin Film PhotoVoltaic applications; what the characterization can teach to the film growers

Edmondo Gilioli
2011

Abstract

CIGS phase diagram is very complex and the information from different characterizations has been extremely useful to optimize the growth conditions. The capability of PED to deposit CIGS films on Mo-coated SLG via PED technique, obtaining stoichiometric films by a "single-stage" route, will be discussed and motivated. The structural properties of the samples were characterized by XRD; morphological analysis of the samples was conducted by AFM, SEM, equipped with an EDS detector for compositional analysis and TEM. The growth temperature and the post-deposition thermal annealing influence on the Cu stoichiometry (which can be used for [Cu] grading along the film growth axis), the preferential out-of-plane orientation of CIGS grains, and the morphological properties and grain size, are reported. Raman spectroscopy has been used to detect secondary phases, whilst XPS and SIMS measurements were utilized to check "wanted" (Na from SL glass) and "unwanted" contaminations (i.e., Al from the Al2O3 beam guide). Combined TRPL and DLTS measurements provide hints on defects related to stoichiometric variations.
2011
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/178064
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact