Basing on the performances of high quality AlN piezoelectric films, acoustic resonators exploiting the propagation of both surface and bulk waves (SAW, BAW) and operating at microwave frequencies have been studied and experimented. Because of the high values of the acoustic wave velocities in both AlN and Si substrates, high frequency operations can be easily achieved. The expected frequency limit can be so high as 5 GHz and 10 - 15 GHz for SAW and BAW devices, respectively.
Microwave frequency acoustic resonators implemented on monolithic Si/AlN substrates
CCALIENDO;
2001
Abstract
Basing on the performances of high quality AlN piezoelectric films, acoustic resonators exploiting the propagation of both surface and bulk waves (SAW, BAW) and operating at microwave frequencies have been studied and experimented. Because of the high values of the acoustic wave velocities in both AlN and Si substrates, high frequency operations can be easily achieved. The expected frequency limit can be so high as 5 GHz and 10 - 15 GHz for SAW and BAW devices, respectively.File in questo prodotto:
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