The authors measured the current-voltage characteristics of diodes made of different epitaxial n** plus -n-n** plus sandwich structures. The influence of the n-region length before the requirements for ballistic transport are met.
DEPENDENCE OF I-V CHARACTERISTICS OF GaAs n** plus -n-n** plus DIODES ON THE ACTIVE REGION LENGTH
Kaciulis S;
1984
Abstract
The authors measured the current-voltage characteristics of diodes made of different epitaxial n** plus -n-n** plus sandwich structures. The influence of the n-region length before the requirements for ballistic transport are met.File in questo prodotto:
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