This communication reports on rapid, efficient synthesis of the metal-organic chemical vapor deposition (MOCVD) precursor (methylcyclopentadienyl)allylplatinum. The compound is shown to be an effective precursor for the deposition of platinum thin films giving deposits of high quality and purity, probably due to the nature of ligands which seems to be good leaving groups as confirmed by mass spectrometric pathway.
Synthesis and characterization of methylcyclopentadienyl-(eta(3)-allyl)platinum and its use as a metallo-organic chemical vapour deposition precursor of platinum
Rossetto G;
1999
Abstract
This communication reports on rapid, efficient synthesis of the metal-organic chemical vapor deposition (MOCVD) precursor (methylcyclopentadienyl)allylplatinum. The compound is shown to be an effective precursor for the deposition of platinum thin films giving deposits of high quality and purity, probably due to the nature of ligands which seems to be good leaving groups as confirmed by mass spectrometric pathway.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
prod_213531-doc_48978.pdf
solo utenti autorizzati
Descrizione: Synthesis and characterization of methylcyclopentadienyl-(eta3-allyl)platinum its use as metallorganic chemical vapour deposition precursor of Pt
Dimensione
160 kB
Formato
Adobe PDF
|
160 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.


