This communication reports on rapid, efficient synthesis of the metal-organic chemical vapor deposition (MOCVD) precursor (methylcyclopentadienyl)allylplatinum. The compound is shown to be an effective precursor for the deposition of platinum thin films giving deposits of high quality and purity, probably due to the nature of ligands which seems to be good leaving groups as confirmed by mass spectrometric pathway.

Synthesis and characterization of methylcyclopentadienyl-(eta(3)-allyl)platinum and its use as a metallo-organic chemical vapour deposition precursor of platinum

Rossetto G;
1999

Abstract

This communication reports on rapid, efficient synthesis of the metal-organic chemical vapor deposition (MOCVD) precursor (methylcyclopentadienyl)allylplatinum. The compound is shown to be an effective precursor for the deposition of platinum thin films giving deposits of high quality and purity, probably due to the nature of ligands which seems to be good leaving groups as confirmed by mass spectrometric pathway.
1999
CHIMICA INORGANICA E DELLE SUPERFICI
Istituto di Chimica della Materia Condensata e di Tecnologie per l'Energia - ICMATE
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN
platinum thin films
MOCVD
(methylcyclopentadienyl)allylplatinum
thin films
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Descrizione: Synthesis and characterization of methylcyclopentadienyl-(eta3-allyl)platinum its use as metallorganic chemical vapour deposition precursor of Pt
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/179251
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