A semiconductor laser containing seven InAs-In- GaAs stacked quantum-dot (QD) layers was grown by molecular beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 120 m were fabricated and tested. A high modal gain of 41 cm?1 was obtained at room temperature corresponding to a modal gain of 6 cm?1 per QD layer, which is very promising to enable the realization of 1.3-m ultrashort cavity devices such as vertical-cavity surface-emitting lasers. Ground state laser action was achieved for a 360-m-cavity length with as-cleaved facets. The transparency current density per QD layer and internal quantum efficiency were 13 A/cm2 and 67%, respectively.
High-Modal Gain 1300-nm In(Ga)As-GaAs Quantum-Dot Lasers
V Tasco;M T Todaro;A Passaseo;M De Vittorio
2006
Abstract
A semiconductor laser containing seven InAs-In- GaAs stacked quantum-dot (QD) layers was grown by molecular beam epitaxy. Shallow mesa ridge-waveguide lasers with stripe width of 120 m were fabricated and tested. A high modal gain of 41 cm?1 was obtained at room temperature corresponding to a modal gain of 6 cm?1 per QD layer, which is very promising to enable the realization of 1.3-m ultrashort cavity devices such as vertical-cavity surface-emitting lasers. Ground state laser action was achieved for a 360-m-cavity length with as-cleaved facets. The transparency current density per QD layer and internal quantum efficiency were 13 A/cm2 and 67%, respectively.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
