Liquid phase epitaxial growth of InP/InGaAs(P) infrared emitting diodes was studied systematically. Small area surface emitting LED chips were prepared to cover completely the 1100-1700 nm wavelength ranges. Nine different diodes were fabricated with optimal spacing of the peak emission wavelengths in order to have sufficient overlapping of their spectra. Efficient LEDs with narrow spectra have been realised by careful selection of the layer structure and growth conditions. Thick active layers with constant composition and abrupt interfaces have been grown for each emission wavelength. The long wavelength diodes (1275-1675 nm) were grown with additional quaternary layer(s) to prevent the melt-back of the active layer by InP melt. Low growth temperature (590°C) was used to prepare the LED structures. In the spectral range of 1250-1520 nm higher growth temperatures (625-645°C) were necessary to improve the device parameters. Such phenomena confirm the existence of the miscibility gap in the InGaAsP quaternary crystal system. Quaternary layers grown in the middle of the immiscibile region showed non-uniform composition and ragged interfaces at the upper heterojunction.
Influence of LPE growth conditions on the electroluminescence properties of InP/InGaAs(P) infrared emitting diodes
2001
Abstract
Liquid phase epitaxial growth of InP/InGaAs(P) infrared emitting diodes was studied systematically. Small area surface emitting LED chips were prepared to cover completely the 1100-1700 nm wavelength ranges. Nine different diodes were fabricated with optimal spacing of the peak emission wavelengths in order to have sufficient overlapping of their spectra. Efficient LEDs with narrow spectra have been realised by careful selection of the layer structure and growth conditions. Thick active layers with constant composition and abrupt interfaces have been grown for each emission wavelength. The long wavelength diodes (1275-1675 nm) were grown with additional quaternary layer(s) to prevent the melt-back of the active layer by InP melt. Low growth temperature (590°C) was used to prepare the LED structures. In the spectral range of 1250-1520 nm higher growth temperatures (625-645°C) were necessary to improve the device parameters. Such phenomena confirm the existence of the miscibility gap in the InGaAsP quaternary crystal system. Quaternary layers grown in the middle of the immiscibile region showed non-uniform composition and ragged interfaces at the upper heterojunction.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
