(111)-oriented GaAs heterolayers have been deposited by metalorganic vapour phase epitaxy (MOVPE) at different III-V ratios and growth times on GaP and InP substrates of both A and B polarities. The strain release has been determined by Raman spectroscopy. The growth mechanisms are discussed on the basis of the images obtained by atomic force microscopy.
Raman scattering study and AFM morphological characterization of MOVPE-grown (111)-strained heterostructures
Labardi M;
1996
Abstract
(111)-oriented GaAs heterolayers have been deposited by metalorganic vapour phase epitaxy (MOVPE) at different III-V ratios and growth times on GaP and InP substrates of both A and B polarities. The strain release has been determined by Raman spectroscopy. The growth mechanisms are discussed on the basis of the images obtained by atomic force microscopy.File in questo prodotto:
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Descrizione: Raman scattering study and AFM morphological characterization of MOVPE-grown (111)-strained heterostructures
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