The aim of this project is the incorporation and optimization of capacitance relaxation techniques into Scanning Capacitance Microscopy and their application to analysis of inorganic and organic semiconductor, as well as nanostructures. It will add a new analytic feature to the state of the art Scanning Capacitance Microscope, providing the possibility to analyse and image the 2D and 3D distribution of electrically active impurities, forming deep energetic levels in semiconductors, on deep sub-micrometer level. It intends to utilize and combine both the partners' experimental equipment and experience acquired within their fields of specialization. The expected results will be exploited in further experimental work at partners' laboratories, in laboratories in third countries, and offered to interested enterprises for commercialization.
Advanced scanning probe microscopy for analysis of defects in inorganic and organic semiconductors and nanostructures
F Giannazzo;
2009
Abstract
The aim of this project is the incorporation and optimization of capacitance relaxation techniques into Scanning Capacitance Microscopy and their application to analysis of inorganic and organic semiconductor, as well as nanostructures. It will add a new analytic feature to the state of the art Scanning Capacitance Microscope, providing the possibility to analyse and image the 2D and 3D distribution of electrically active impurities, forming deep energetic levels in semiconductors, on deep sub-micrometer level. It intends to utilize and combine both the partners' experimental equipment and experience acquired within their fields of specialization. The expected results will be exploited in further experimental work at partners' laboratories, in laboratories in third countries, and offered to interested enterprises for commercialization.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.