GIANNAZZO, FILIPPO
GIANNAZZO, FILIPPO
Istituto per la Microelettronica e Microsistemi - IMM
A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method
2015 Puglisi Rosaria, A; Caccamo, Sebastiano; D'Urso, Luisa; Fisichella, Gabriele; Giannazzo, Filippo; Italia, Markus; LA MAGNA, Antonino
A look underneath the SiO2/4H-SiC interface after N2O thermal treatments
2013 Fiorenza, P; Giannazzo, F; K Swanson, L; Frazzetto, A; Lorenti, S; S Alessandrino, M; Roccaforte, F
A nanoscale look in the channel of 4H-SiC lateral MOSFETs
2013 Fiorenza, P; Frazzetto, A; Swanson, Lk; Giannazzo, F; Roccaforte, F
A Review on Metal Nanoparticles Nucleation and Growth on/in Graphene
2017 Ruffino, Francesco; Giannazzo, Filippo
Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC
2007 Giannazzo F; Roccaforte F; Raineri V
Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy
2002 Raineri, V; Calcagno, L; Giannazzo, F; Goghero, D; Musumeci, F; Roccaforte, F; Via, La; F,
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide
2020 Spera, Monia; Greco, Giuseppe; Severino, Andrea; Vivona, Marilena; Fiorenza, Patrick; Giannazzo, Filippo; Roccaforte, Fabrizio
Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN
2016 Fiorenza, P; Greco, G; Vivona, M; Giannazzo, F; DI FRANCO, Salvatore; Frazzetto, A; Guarnera, A; Saggio, M; Iucolano, F; Patti, A; Roccaforte, F
Advanced materials nanocharacterization
2010 Giannazzo F; Eyben P; Baranowski J; Camassel J; Lanyi S
Advanced scanning probe microscopy for analysis of defects in inorganic and organic semiconductors and nanostructures
2009 Giannazzo, F; Lanyi, S
Advances in the fabrication of graphene transistors on flexible substrates
2017 G. Fisichella ; S. Lo Verso ; S. Di Marco ; V. Vinciguerra ; E. Schilirò ; S. Di Franco ; R. Lo Nigro ; F. Roccaforte ; A. Zurutuza ; A. Centeno ; S. Ravesi ; F. Giannazzo
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
2020 Schiliro, E; Lo Nigro, R; Panasci, Se; Gelardi, Fm; Agnello, S; Yakimova, R; Roccaforte, F; Giannazzo, F
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization
2017 Giannazzo, Filippo; Fisichella, Gabriele; Greco, Giuseppe; Di Franco, Salvatore; Deretzis, Ioannis; La Magna, Antonino; Bongiorno, Corrado; Nicotra, Giuseppe; Spinella, Corrado; Scopelliti, Michelangelo; Pignataro, Bruno; Agnello, Simonpietro; Roccaforte, Fabrizio
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization
2017 Giannazzo, F; Fisichella, G; Greco, G; Di Franco, S; Deretzis, I; La Magna, A; Bongiorno, C; Nicotra, G; Spinella, C; Scopelliti, M; Pignataro, B; Agnello, S; Roccaforte, Fabrizio; F,
Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process
2007 Canino, M; Giannazzo, F; Roccaforte, F; Poggi, A; Solmi, S; Raineri, V; Nipoti, R
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process
2006 Canino M; .Giannazzo F.; Roccaforte F.; Poggi A.; Solmi S.; Nipoti R.
Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process
2007 Canino, Mc; Giannazzo, F; Roccaforte, F; Poggi, A; Solmi, S; Raineri, V; Nipoti, R
Anchoring molecular magnets on the Si(100) surface
2004 Condorelli, Gg; Motta, A; Fragala, Il; Giannazzo, F; Raineri, V; Caneschi, A; Gatteschi, D
Annealing behavior of Ta-based contacts on AlGaN/GAN heterostructures
2012 G.Greco; R. Lo Nigro; P. Fiorenza; F. Giannazzo; S. Di Franco; C. Bongiorno; F. Roccaforte
Annealing temperature dependence of the electrically active profiles and surface roughness in multiple Al implanted 4H-SiC
2009 Giannazzo, F; Roccaforte, F; Salinas, D; Raineri, V
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method | 1-gen-2015 | Puglisi Rosaria, A; Caccamo, Sebastiano; D'Urso, Luisa; Fisichella, Gabriele; Giannazzo, Filippo; Italia, Markus; LA MAGNA, Antonino | |
| A look underneath the SiO2/4H-SiC interface after N2O thermal treatments | 1-gen-2013 | Fiorenza, P; Giannazzo, F; K Swanson, L; Frazzetto, A; Lorenti, S; S Alessandrino, M; Roccaforte, F | |
| A nanoscale look in the channel of 4H-SiC lateral MOSFETs | 1-gen-2013 | Fiorenza, P; Frazzetto, A; Swanson, Lk; Giannazzo, F; Roccaforte, F | |
| A Review on Metal Nanoparticles Nucleation and Growth on/in Graphene | 1-gen-2017 | Ruffino, Francesco; Giannazzo, Filippo | |
| Acceptor, compensation, and mobility profiles in multiple Al implanted 4H-SiC | 1-gen-2007 | Giannazzo F; Roccaforte F; Raineri V | |
| Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy | 1-gen-2002 | Raineri, V; Calcagno, L; Giannazzo, F; Goghero, D; Musumeci, F; Roccaforte, F; Via, La; F, | |
| Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide | 1-gen-2020 | Spera, Monia; Greco, Giuseppe; Severino, Andrea; Vivona, Marilena; Fiorenza, Patrick; Giannazzo, Filippo; Roccaforte, Fabrizio | |
| Advanced characterizations of insulator/semiconductor interfaces in SiC and GaN | 1-gen-2016 | Fiorenza, P; Greco, G; Vivona, M; Giannazzo, F; DI FRANCO, Salvatore; Frazzetto, A; Guarnera, A; Saggio, M; Iucolano, F; Patti, A; Roccaforte, F | |
| Advanced materials nanocharacterization | 1-gen-2010 | Giannazzo F; Eyben P; Baranowski J; Camassel J; Lanyi S | |
| Advanced scanning probe microscopy for analysis of defects in inorganic and organic semiconductors and nanostructures | 1-gen-2009 | Giannazzo, F; Lanyi, S | |
| Advances in the fabrication of graphene transistors on flexible substrates | 1-gen-2017 | G. Fisichella ; S. Lo Verso ; S. Di Marco ; V. Vinciguerra ; E. Schilirò ; S. Di Franco ; R. Lo Nigro ; F. Roccaforte ; A. Zurutuza ; A. Centeno ; S. Ravesi ; F. Giannazzo | |
| Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene | 1-gen-2020 | Schiliro, E; Lo Nigro, R; Panasci, Se; Gelardi, Fm; Agnello, S; Yakimova, R; Roccaforte, F; Giannazzo, F | |
| Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization | 1-gen-2017 | Giannazzo, Filippo; Fisichella, Gabriele; Greco, Giuseppe; Di Franco, Salvatore; Deretzis, Ioannis; La Magna, Antonino; Bongiorno, Corrado; Nicotra, Giuseppe; Spinella, Corrado; Scopelliti, Michelangelo; Pignataro, Bruno; Agnello, Simonpietro; Roccaforte, Fabrizio | |
| Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization | 1-gen-2017 | Giannazzo, F; Fisichella, G; Greco, G; Di Franco, S; Deretzis, I; La Magna, A; Bongiorno, C; Nicotra, G; Spinella, C; Scopelliti, M; Pignataro, B; Agnello, S; Roccaforte, Fabrizio; F, | |
| Analysis of the electrical activation of P+ implanted layers as a function of the heating rate of the annealing process | 1-gen-2007 | Canino, M; Giannazzo, F; Roccaforte, F; Poggi, A; Solmi, S; Raineri, V; Nipoti, R | |
| Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process | 1-gen-2006 | Canino M; .Giannazzo F.; Roccaforte F.; Poggi A.; Solmi S.; Nipoti R. | |
| Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process | 1-gen-2007 | Canino, Mc; Giannazzo, F; Roccaforte, F; Poggi, A; Solmi, S; Raineri, V; Nipoti, R | |
| Anchoring molecular magnets on the Si(100) surface | 1-gen-2004 | Condorelli, Gg; Motta, A; Fragala, Il; Giannazzo, F; Raineri, V; Caneschi, A; Gatteschi, D | |
| Annealing behavior of Ta-based contacts on AlGaN/GAN heterostructures | 1-gen-2012 | G.Greco; R. Lo Nigro; P. Fiorenza; F. Giannazzo; S. Di Franco; C. Bongiorno; F. Roccaforte | |
| Annealing temperature dependence of the electrically active profiles and surface roughness in multiple Al implanted 4H-SiC | 1-gen-2009 | Giannazzo, F; Roccaforte, F; Salinas, D; Raineri, V |