We have performed reflectivity and photoluminescence measurements on a set of InxGa1-xAs | InyGa1-yAs | GaAs(001) stepped/asymmetric quantum wells with an intentionally abrupt change of indium composition (x=0.149
Spontaneous quantum dots formation at InxGa1-xAs/InyGa1-yAs interfaces
Schiumarini D;Selci S;Tomassini;
2002
Abstract
We have performed reflectivity and photoluminescence measurements on a set of InxGa1-xAs | InyGa1-yAs | GaAs(001) stepped/asymmetric quantum wells with an intentionally abrupt change of indium composition (x=0.149File in questo prodotto:
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