Two different Sb-induced phases have been found upon annealing on freshly evaporated Si(100)2 x 1 surfaces. The surface electronic structures of the two phases (1 x 1-Sb and 2 x 1-Sb) have been studied with surface differential reflectivity (SDR) and angle-resolved photoelectron spectroscopy (ARUPS). Both techniques show the existence of a gap of approximately 1.6 and 1.4 eV for the two phases, with the empty state located near the Fermi level.
ELECTRONIC STATES ON SI(100)2X1-SB - EXISTENCE OF 2 SEMICONDUCTING PHASES
A Cricenti;S Selci;L Ferrari;
1993
Abstract
Two different Sb-induced phases have been found upon annealing on freshly evaporated Si(100)2 x 1 surfaces. The surface electronic structures of the two phases (1 x 1-Sb and 2 x 1-Sb) have been studied with surface differential reflectivity (SDR) and angle-resolved photoelectron spectroscopy (ARUPS). Both techniques show the existence of a gap of approximately 1.6 and 1.4 eV for the two phases, with the empty state located near the Fermi level.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
