The two-tone intermodulation arising in MgB2 thin films deposited in situ by planar magnetron sputtering on sapphire substrates is studied. Samples are characterized using an open-ended dielectric puck resonator operating at 8.8 GHz. The experimental results show that the third-order products increase with the two-tone input power with a slope ranging between 1.5 and 2.3. The behavior can be understood introducing a mechanism of vortex penetration in grain boundaries as the most plausible source of nonlinearities in these films. This assumption is confirmed by the analysis of the field dependence of the surface resistance, that show a linear behavior at all temperatures under test. (C) 2003 American Institute of Physics.
Microwave intermodulation distortion of MgB2 thin films
Lamura G;Chiarella F;
2003
Abstract
The two-tone intermodulation arising in MgB2 thin films deposited in situ by planar magnetron sputtering on sapphire substrates is studied. Samples are characterized using an open-ended dielectric puck resonator operating at 8.8 GHz. The experimental results show that the third-order products increase with the two-tone input power with a slope ranging between 1.5 and 2.3. The behavior can be understood introducing a mechanism of vortex penetration in grain boundaries as the most plausible source of nonlinearities in these films. This assumption is confirmed by the analysis of the field dependence of the surface resistance, that show a linear behavior at all temperatures under test. (C) 2003 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
