Tungsten tips obtained through electrochemical etching have been characterized by scanning electron microscopy, scanning Auger microscopy, and scanning tunneling microscopy. While such tips resulted to be very sharp, a thick oxide layer (~10 nm) is present at the apex. High-vacuum annealing at 1800 K removes most of such oxide.
Preparation and characterization of tungsten tips for scanning tunneling microscopy
Cricenti A;Paparazzo E;Selci;
1994
Abstract
Tungsten tips obtained through electrochemical etching have been characterized by scanning electron microscopy, scanning Auger microscopy, and scanning tunneling microscopy. While such tips resulted to be very sharp, a thick oxide layer (~10 nm) is present at the apex. High-vacuum annealing at 1800 K removes most of such oxide.File in questo prodotto:
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