The tunneling dynamics of excitons and free carriers in AlxGa1-xAs/GaAs asymmetric double quantum well and near-surface quantum well structures has been investigated by means of time-resolved optical techniques. The competing processes of carrier tunneling out of the quantum well and exciton formation and recombination inside the quantum well have been thoroughly studied in the range of the excitation densities relevant to device applications. A consistent picture capable of fully describing the carrier and excition-tunneling mechanisms in both types of structures has been obtained and apparently contrasting results in the recent literature are clarified.
Optical investigation of carrier tunneling in semiconductor nanostructures
S Ceccherini;
1997
Abstract
The tunneling dynamics of excitons and free carriers in AlxGa1-xAs/GaAs asymmetric double quantum well and near-surface quantum well structures has been investigated by means of time-resolved optical techniques. The competing processes of carrier tunneling out of the quantum well and exciton formation and recombination inside the quantum well have been thoroughly studied in the range of the excitation densities relevant to device applications. A consistent picture capable of fully describing the carrier and excition-tunneling mechanisms in both types of structures has been obtained and apparently contrasting results in the recent literature are clarified.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
