The transverse Dember effect in semiconductor anisotropic films (PbS, PbSe) can be used for detection of ns infrared (IR) pulses in the 1-4 ?m region with a typical 0.1 V MW responsivity for detectors of 1 cm2 area.
Fast detection in the near and medium infrared by means of transverse dember effect in anisotropic PbS and PbSe films
Marchetti S;Palleschi V;Simili;
1993
Abstract
The transverse Dember effect in semiconductor anisotropic films (PbS, PbSe) can be used for detection of ns infrared (IR) pulses in the 1-4 ?m region with a typical 0.1 V MW responsivity for detectors of 1 cm2 area.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
