Current-voltage and capacitance-voltage measurements on Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation of H+ and P+ ions have been performed in the temperature range of 80-360 K. Schottky barrier heights up to 0.79 V have been obtained which value is among the highest ones reported for p-Si so far. The unusual electrical properties are discussed in terms of full depletion approximation, lateral inhomogeneity of barrier height, Fermi-level pinning and band gap broadening due to hydrogenation. An overview of electrical behaviour of metal/n/p Schottky junctions is presented.
Electrical characterisation of Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation
E Gombia;R Mosca;
1998
Abstract
Current-voltage and capacitance-voltage measurements on Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation of H+ and P+ ions have been performed in the temperature range of 80-360 K. Schottky barrier heights up to 0.79 V have been obtained which value is among the highest ones reported for p-Si so far. The unusual electrical properties are discussed in terms of full depletion approximation, lateral inhomogeneity of barrier height, Fermi-level pinning and band gap broadening due to hydrogenation. An overview of electrical behaviour of metal/n/p Schottky junctions is presented.File in questo prodotto:
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