We investigate transient currents in HfO(2) dielectrics, considering their dependence on electric field, temperature and Gate stack composition. We show that transient currents remain an issue even at very low temperatures and irrespective of the HfO(2)/SiO(2) bilayer properties. Finally, we assess their impact on the reliability of precision circuit and memory applications.
Transient currents in HfO2 and their impact on circuit and memory applications
S Spiga;
2006
Abstract
We investigate transient currents in HfO(2) dielectrics, considering their dependence on electric field, temperature and Gate stack composition. We show that transient currents remain an issue even at very low temperatures and irrespective of the HfO(2)/SiO(2) bilayer properties. Finally, we assess their impact on the reliability of precision circuit and memory applications.File in questo prodotto:
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