The SAL 601 chemically amplified resist has been characterized for electron-beam (e-beam) exposure with feature size down to 75 nm, The main resist process parameters such as the pre and post exposure baking time and temperature, the resist thickness and its development conditions, have been investigated and calibrated for sub-100 nm resolution. Various writing strategies making use of test patterns comprising different nominal feature-size were also investigated. Dense lines, as fine as 75 nm, are achieved in a 350 nm thick resist with exposure latitude of 0.4 nm/mu C/cm(2) at 50 kV accelerating voltage. The sub-100 nm resolution was achieved with a 3 sigma value of 12 nm.
Electron-beam study of nanometer performances of the SAL 601 chemically amplified resist
Gerardino A;
1998
Abstract
The SAL 601 chemically amplified resist has been characterized for electron-beam (e-beam) exposure with feature size down to 75 nm, The main resist process parameters such as the pre and post exposure baking time and temperature, the resist thickness and its development conditions, have been investigated and calibrated for sub-100 nm resolution. Various writing strategies making use of test patterns comprising different nominal feature-size were also investigated. Dense lines, as fine as 75 nm, are achieved in a 350 nm thick resist with exposure latitude of 0.4 nm/mu C/cm(2) at 50 kV accelerating voltage. The sub-100 nm resolution was achieved with a 3 sigma value of 12 nm.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
