Due to the downscaling of device dimensions in CMOS technology, the introduction of metal gate electrodes and high-k dielectrics will be necessary in order to meet future performance requirements. In particular, deposition techniques such as chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) have been identified as promising methods for growth of these materials. In this scope, we have analysed properties of Ru and RuO(2) gate electrodes in metal-oxide-semiconductor (MOS) gate stacks prepared on SiO(2), atomic-layer chemical vapor deposition (ALCVD) Al(2)O(3) and MBE Y(2)O(3) dielectric films. The Ru and RuO(2) films were grown by metal-organic chemical vapor deposition (MOCVD) at 250degreesC. The dielectric and metal gate electrode films were analysed by X-ray diffraction and time-of-flight secondary ion mass spectroscopy (TOF-SIMS).
Ru and RuO(2) gate electrodes for advanced CMOS technology
Wiemer C;
2004
Abstract
Due to the downscaling of device dimensions in CMOS technology, the introduction of metal gate electrodes and high-k dielectrics will be necessary in order to meet future performance requirements. In particular, deposition techniques such as chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) have been identified as promising methods for growth of these materials. In this scope, we have analysed properties of Ru and RuO(2) gate electrodes in metal-oxide-semiconductor (MOS) gate stacks prepared on SiO(2), atomic-layer chemical vapor deposition (ALCVD) Al(2)O(3) and MBE Y(2)O(3) dielectric films. The Ru and RuO(2) films were grown by metal-organic chemical vapor deposition (MOCVD) at 250degreesC. The dielectric and metal gate electrode films were analysed by X-ray diffraction and time-of-flight secondary ion mass spectroscopy (TOF-SIMS).I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
