We have obtained the density of states (DOS) in polycrystalline silicon from the analysis of the field-effect conductance. The DOS exhibits a U-shaped distribution with an exponential band tail. The method is very sensitive and accounts for the effect of film morphology and differences in device processing (e.g., post-hydrogenation).
Determination of gap state density in polycrystalline silicon by field effect conductance
G Fortunato;
1986
Abstract
We have obtained the density of states (DOS) in polycrystalline silicon from the analysis of the field-effect conductance. The DOS exhibits a U-shaped distribution with an exponential band tail. The method is very sensitive and accounts for the effect of film morphology and differences in device processing (e.g., post-hydrogenation).File in questo prodotto:
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