Bi-based superconducting multilayers, consisting of Bi2Sr2CuO6+delta (2201) layers alternately stacked with CaCuO2 or SrCuO2 layers, have been deposited by Molecular Beam Epitaxy (MBE) using co-deposition and growth interruption techniques. In situ Reflection High Energy Electron Diffraction (RHEED) has been used to monitor the surface of the different layers giving evidence of a two-dimensional growth mode. The layered structure of the samples has been confirmed by X-ray diffraction analyses. Resistive measurements have shown superconducting 2201/CaCuO2 samples with critical temperatures strongly depending on the thickness of the CaCuO2. The 2201/SrCuO2 multilayers do not show a zero electrical resistance above 4.2 K, but the resistance vs. temperature curves present a sharp decrease around 60 K indicative of a superconducting onset. (C) 1999 Elsevier Science B.V. All rights reserved.

Bi2Sr2CuO6+delta/ACuO(2) (A = Ca,Sr) superconducting multilayers obtained by molecular beam epitaxy

Russo R;
1999

Abstract

Bi-based superconducting multilayers, consisting of Bi2Sr2CuO6+delta (2201) layers alternately stacked with CaCuO2 or SrCuO2 layers, have been deposited by Molecular Beam Epitaxy (MBE) using co-deposition and growth interruption techniques. In situ Reflection High Energy Electron Diffraction (RHEED) has been used to monitor the surface of the different layers giving evidence of a two-dimensional growth mode. The layered structure of the samples has been confirmed by X-ray diffraction analyses. Resistive measurements have shown superconducting 2201/CaCuO2 samples with critical temperatures strongly depending on the thickness of the CaCuO2. The 2201/SrCuO2 multilayers do not show a zero electrical resistance above 4.2 K, but the resistance vs. temperature curves present a sharp decrease around 60 K indicative of a superconducting onset. (C) 1999 Elsevier Science B.V. All rights reserved.
1999
superconducting multilayers
Molecular Beam Epitaxy
Reflection High Energy Electron Diffraction
ARTIFICIALLY LAYERED FILMS
PULSED-LASER DEPOSITION
SINGLE-CRYSTALS
GROWTH
OXYGEN
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/194302
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