In this work the application of a-Si:H thinfilmtransistor (TFT) technology in the field of chemical sensors is presented. In particular, two different types of devices have been fabricated: a) Pd-gate hydrogen sensors; b) K+-ion sensitive FET (ISFET). The obtained results show that a-Si:H TFT can be successfully used as gassensitive and ion-sensitive sensors and can represent a promising technology in this area.

Chemically sensitive hydrogenated amorphous silicon thin-film transistors

A Pecora;G Fortunato;L Mariucci;A Bearzotti
1991

Abstract

In this work the application of a-Si:H thinfilmtransistor (TFT) technology in the field of chemical sensors is presented. In particular, two different types of devices have been fabricated: a) Pd-gate hydrogen sensors; b) K+-ion sensitive FET (ISFET). The obtained results show that a-Si:H TFT can be successfully used as gassensitive and ion-sensitive sensors and can represent a promising technology in this area.
1991
Istituto per la Microelettronica e Microsistemi - IMM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/1964
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