Ta(5 nm)/CoFeB(1 nm)/MgO(2 nm) stacks have been deposited by magnetron sputtering on top of 8" Si/SiN/SiO2 substrates, where the effects of different passivation steps related to copper damascene processes have been simulated. It is shown that excellent thickness uniformity of the deposited stack is achieved on 8" areas, and strong uniaxial perpendicular magnetic anisotropy K-u up to 0.5-1x10(6) J/m(3) develops in the 1 nm CoFeB following thermal annealing at 300 degrees C for 2 h, irrespective of the adopted passivation treatment. The CoFeB coercive field varies from 0.21 to 0.51 kA/m for substrate surface roughness in the range of 0.45-0.55 nm. These results are of relevance in the view of integrating into standard complementary metal-oxide semiconductor process, advanced magnetic memory concepts based on perpendicular magnetic anisotropy in ultrathin layers.
Perpendicular magnetic anisotropy in Ta/CoFeB/MgO systems synthesized on treated SiN/SiO2 substrates for magnetic memories
R Mantovan;A Lamperti;G Tallarida;
2013
Abstract
Ta(5 nm)/CoFeB(1 nm)/MgO(2 nm) stacks have been deposited by magnetron sputtering on top of 8" Si/SiN/SiO2 substrates, where the effects of different passivation steps related to copper damascene processes have been simulated. It is shown that excellent thickness uniformity of the deposited stack is achieved on 8" areas, and strong uniaxial perpendicular magnetic anisotropy K-u up to 0.5-1x10(6) J/m(3) develops in the 1 nm CoFeB following thermal annealing at 300 degrees C for 2 h, irrespective of the adopted passivation treatment. The CoFeB coercive field varies from 0.21 to 0.51 kA/m for substrate surface roughness in the range of 0.45-0.55 nm. These results are of relevance in the view of integrating into standard complementary metal-oxide semiconductor process, advanced magnetic memory concepts based on perpendicular magnetic anisotropy in ultrathin layers.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
