A field effect device fully made of strontium titanate (STO) was reported. The perovskite-type material was attractive for oxide electronics both for its semiconducting properties and for its dielectric properties in the doped state. Both of these properties were exploited by developing a field effect device in which oxygen deficient STO acted as a conducting channel and stoichiometric STO as a dielectric barrier.
All SrTiO3 field effect devices made by anodic oxidation of epitaxial semiconducting thin films
E Bellingeri;L Pellegrino;I Pallecchi;
2003
Abstract
A field effect device fully made of strontium titanate (STO) was reported. The perovskite-type material was attractive for oxide electronics both for its semiconducting properties and for its dielectric properties in the doped state. Both of these properties were exploited by developing a field effect device in which oxygen deficient STO acted as a conducting channel and stoichiometric STO as a dielectric barrier.File in questo prodotto:
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