The photoluminescence of InAs/GaAs pseudomorphic single quantum wells, of width 1, 1.2, and 1.6 monolayers, is studied before and after diffusion of monoatomic deuterium into the samples. The luminescence shows a red shift for increasing nominal well width, suggesting an interface roughness on a scale much smaller than the exciton size. The luminescence efficiency increases by several orders of magnitude after sample deuteration. A discussion about the origin of radiative recombination in these heterostructures, before and after deuteration, is also given.
GIANT PHOTOLUMINESCENCE ENHANCEMENT IN DEUTERATED HIGHLY STRAINED INAS/GAAS QUANTUM-WELLS
1994
Abstract
The photoluminescence of InAs/GaAs pseudomorphic single quantum wells, of width 1, 1.2, and 1.6 monolayers, is studied before and after diffusion of monoatomic deuterium into the samples. The luminescence shows a red shift for increasing nominal well width, suggesting an interface roughness on a scale much smaller than the exciton size. The luminescence efficiency increases by several orders of magnitude after sample deuteration. A discussion about the origin of radiative recombination in these heterostructures, before and after deuteration, is also given.File in questo prodotto:
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