We report the observation in a III-V semiconductor quantum-well structure, of free excitons with wave function mainly confined inside the barrier material GaAs. The confined-exciton energy falls between the fundamental level of the bulk three-dimensional exciton and its continuum of states. The confinement-energy values, obtained by an ad hoc designed luminescence self-absorption spectroscopy method, are consistent with the barrier parameters.
EXCITON CONFINEMENT IN GAAS QUANTUM BARRIERS
1993
Abstract
We report the observation in a III-V semiconductor quantum-well structure, of free excitons with wave function mainly confined inside the barrier material GaAs. The confined-exciton energy falls between the fundamental level of the bulk three-dimensional exciton and its continuum of states. The confinement-energy values, obtained by an ad hoc designed luminescence self-absorption spectroscopy method, are consistent with the barrier parameters.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
