Mn5Ge3(001) thin films grown on Ge(111)-c(2 × 8) reconstructed surfaces were studied by angle-resolved photoemission using synchrotron radiation in the 14-94 eV photon energy range. The results obtained in the ALM plane and in the AHK plane are in agreement with simulations starting with band structure calculations based on the density functional theory. This provides a unique validation of band structure calculations for a proper description of the electronic properties of Mn5Ge3. Only the spectral feature very close to the Fermi level cannot be well explained by the simulation. This departure is discussed in terms of the three-dimensional nature of the sample and of correlation effects

Bulk electronic structure of Mn5Ge3/Ge(111) films by angle-resolved photoemission spectroscopy

P De Padova;A Stroppa;S Picozzi;
2013

Abstract

Mn5Ge3(001) thin films grown on Ge(111)-c(2 × 8) reconstructed surfaces were studied by angle-resolved photoemission using synchrotron radiation in the 14-94 eV photon energy range. The results obtained in the ALM plane and in the AHK plane are in agreement with simulations starting with band structure calculations based on the density functional theory. This provides a unique validation of band structure calculations for a proper description of the electronic properties of Mn5Ge3. Only the spectral feature very close to the Fermi level cannot be well explained by the simulation. This departure is discussed in terms of the three-dimensional nature of the sample and of correlation effects
2013
Istituto di Struttura della Materia - ISM - Sede Roma Tor Vergata
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/199148
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