The growth of multilayer silicene is an exciting challenge for the future of silicon nano-electronics. Here, we use angle-resolved photoemission spectroscopy to map the entire Brillouin zone (BZ) of (?3×?3) R30° reconstructed epitaxial multilayer silicene islands, growing on top of the first (3 × 3) reconstructed silicene wetting layer, on Ag(111) substrates. We found - and V-shape linear dispersions, which we relate to the ? and ?* bands of massless quasiparticles in multilayer silicene, at the BZ centre ??0 and at all the ?? centres of the (?3×?3)R30° Brillouin zones in the extended scheme, due to folding of the Dirac cones at the K and K?' points of the (1 × 1) silicene BZ. The Fermi velocity of ~0:3 × 106 m s-1 obtained is highly promising for potential silicene-based devices.
The quasiparticle band dispersion in epitaxial multilayer silicene
Paola De Padova;Claudio Quaresima;Carlo Ottaviani;Bruno Olivieri;
2013
Abstract
The growth of multilayer silicene is an exciting challenge for the future of silicon nano-electronics. Here, we use angle-resolved photoemission spectroscopy to map the entire Brillouin zone (BZ) of (?3×?3) R30° reconstructed epitaxial multilayer silicene islands, growing on top of the first (3 × 3) reconstructed silicene wetting layer, on Ag(111) substrates. We found - and V-shape linear dispersions, which we relate to the ? and ?* bands of massless quasiparticles in multilayer silicene, at the BZ centre ??0 and at all the ?? centres of the (?3×?3)R30° Brillouin zones in the extended scheme, due to folding of the Dirac cones at the K and K?' points of the (1 × 1) silicene BZ. The Fermi velocity of ~0:3 × 106 m s-1 obtained is highly promising for potential silicene-based devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
