Top-gate hydrogenatedamorphoussiliconthin-filmtransistors have been fabricated which show electrical characteristics suitable for application in the field of chemical sensors. These devices have been specialized to two different types of sensors: (a) Pd-gate hydrogen sensors; (b) K+ ion sensors. The obtained results show that the present technology can be successfully applied to the fabrication of gas-sensitive and ion-sensitive field-effect transistors.
Hydrogenated amorphous silicon technology for chemically sensitive thin-film transistors
L Mariucci;G Fortunato;A Pecora;A Bearzotti;R Leoni
1992
Abstract
Top-gate hydrogenatedamorphoussiliconthin-filmtransistors have been fabricated which show electrical characteristics suitable for application in the field of chemical sensors. These devices have been specialized to two different types of sensors: (a) Pd-gate hydrogen sensors; (b) K+ ion sensors. The obtained results show that the present technology can be successfully applied to the fabrication of gas-sensitive and ion-sensitive field-effect transistors.File in questo prodotto:
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