Synchrotron radiation ultraviolet photoemission spectroscopy (UPS) of O(2s) core levels, valence band (VB) and Sn(4d) spectroscopy was used to monitor the effect of Ar+ sputtering on SnO2 films. The decrease of the O(2s) peak intensity and the increase of the Sn2+ component in the Sn(4d) peak could be satisfactorily correlated with the enhancement of the band gap feature, occurring at 2.9 eV in the VB spectrum,never been due to the formation of Sn(5s-5p) states.

Synchrotron radiation photoelectron spectroscopy of the O(2s) core level as a tool for monitoring the reducing effects of ion bombardment on SnO2 thin films

P De Padova;R Larciprete;C Ottaviani;C Quaresima;P Perfetti;C Crotti;M Zacchigna;
1996

Abstract

Synchrotron radiation ultraviolet photoemission spectroscopy (UPS) of O(2s) core levels, valence band (VB) and Sn(4d) spectroscopy was used to monitor the effect of Ar+ sputtering on SnO2 films. The decrease of the O(2s) peak intensity and the increase of the Sn2+ component in the Sn(4d) peak could be satisfactorily correlated with the enhancement of the band gap feature, occurring at 2.9 eV in the VB spectrum,never been due to the formation of Sn(5s-5p) states.
1996
Istituto di Struttura della Materia - ISM - Sede Roma Tor Vergata
Argon
Ion bombardment
Oxides
Photoelectron spectroscopy
Sputtering
Synchrotron radiation
Thin films
Tin oxides
Semiconducting tin compounds
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/199524
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