ArF excimer laser deposition of tin and tin-oxide films on Si was obtained dissociating tetramethyltin Sn(CH3)4 (TMT) and TMT/N2O mixtures. Information on the gas phase photoproducts was achieved by spontaneous emission spectroscopy. Electronically excited CH and Sn fragments were detected and their formation and decay mechanisms investigated through spectral and temporal analysis of the fluorescence signal. The effect of buffer gases on the emission characteristics was also studied.
Excimer laser deposition and characterization of tin and tin-oxide films
P De Padova;R Larciprete
1991
Abstract
ArF excimer laser deposition of tin and tin-oxide films on Si was obtained dissociating tetramethyltin Sn(CH3)4 (TMT) and TMT/N2O mixtures. Information on the gas phase photoproducts was achieved by spontaneous emission spectroscopy. Electronically excited CH and Sn fragments were detected and their formation and decay mechanisms investigated through spectral and temporal analysis of the fluorescence signal. The effect of buffer gases on the emission characteristics was also studied.File in questo prodotto:
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