We report on the synthesis and structural and electrical characterization of high quality Tl2Ba2Ca1Cu2Ox superconducting thin films. The samples have been prepared ex-situ by a combined approach of Metal-Organic Chemical Vapor Deposition (MOCVD) and thallium vapor diffusion. The films have been grown on 10x10 mm(2) (100) LaAlO3 substrates. X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray analyses (EDX) have investigated the morphological and compositional nature of the films. The transport properties have been measured using both a four-probes and an inductive method. The highest critical temperature and critical current density are 104 K and 1 x 10(6) A/cm(2) respectively. The microwave response of two samples has been studied using a microstrip resonator technique. The best surface resistance values are below 200 mu Omega at 1.2 GHz and 4.2 K. Measurements of the field dependence of the surface resistance have been performed.
Properties of TBCCO 2212 thin films for electronic applications
Salluzzo M;
1999
Abstract
We report on the synthesis and structural and electrical characterization of high quality Tl2Ba2Ca1Cu2Ox superconducting thin films. The samples have been prepared ex-situ by a combined approach of Metal-Organic Chemical Vapor Deposition (MOCVD) and thallium vapor diffusion. The films have been grown on 10x10 mm(2) (100) LaAlO3 substrates. X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray analyses (EDX) have investigated the morphological and compositional nature of the films. The transport properties have been measured using both a four-probes and an inductive method. The highest critical temperature and critical current density are 104 K and 1 x 10(6) A/cm(2) respectively. The microwave response of two samples has been studied using a microstrip resonator technique. The best surface resistance values are below 200 mu Omega at 1.2 GHz and 4.2 K. Measurements of the field dependence of the surface resistance have been performed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
