Step-related surface states in Si(111)2 × 1 are investigated by optical reflectivity. Transitions involving these states occur at 0.35 eV, while terrace-states give rise to the well known peak at 0.45 eV. The experimental data point out that occupied surface states related to steps have a slightly higher energy than terrace-states and therefore they should play a role in the Fermi level pinning.

Electronic surface states at steps in Si(111) 2×1

Selci S;
1983

Abstract

Step-related surface states in Si(111)2 × 1 are investigated by optical reflectivity. Transitions involving these states occur at 0.35 eV, while terrace-states give rise to the well known peak at 0.45 eV. The experimental data point out that occupied surface states related to steps have a slightly higher energy than terrace-states and therefore they should play a role in the Fermi level pinning.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/199839
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact