Sol-gel is one of the possible production techniques of silica-on-silicon integrated optical devices, combining low cost with a great flexibility. In the frame of a European project, we have investigated the application of the sol-gel technique for the realization of an erbium-doped optical amplifier. In particular we developed GeO 2-SiO 2Al 2O 3 sol-gel waveguides doped with Er. The material was optimized in terms of heat treatments, Al 2O 3 co-doping content and Er doping level. RBS measurements showed that well densifted films could be obtained heating the coatings at 700 °C in O 2 flux. Waveguide properties were tested measuring the propagation losses at 840 nm. In the planar waveguide pumped at 980 nm, erbium showed fluorescence around 1530 nm with up to 6.5 ms. In order to achieve lateral confinement, the planar waveguide were co-doped with Na 2O and channel waveguides were fabricated by ion exchange. The feasibility of sodium-silver and sodiron-potassium ion exchange was demonstrated. The influence of the process parameters on passive and active optical properties of the films was studied and straight channel waveguides with Gaussian mode profiles were obtained by the sodium-silver route.

Germania sol-gel waveguides for optical amplifiers

Pelli S;Righini;
2003

Abstract

Sol-gel is one of the possible production techniques of silica-on-silicon integrated optical devices, combining low cost with a great flexibility. In the frame of a European project, we have investigated the application of the sol-gel technique for the realization of an erbium-doped optical amplifier. In particular we developed GeO 2-SiO 2Al 2O 3 sol-gel waveguides doped with Er. The material was optimized in terms of heat treatments, Al 2O 3 co-doping content and Er doping level. RBS measurements showed that well densifted films could be obtained heating the coatings at 700 °C in O 2 flux. Waveguide properties were tested measuring the propagation losses at 840 nm. In the planar waveguide pumped at 980 nm, erbium showed fluorescence around 1530 nm with up to 6.5 ms. In order to achieve lateral confinement, the planar waveguide were co-doped with Na 2O and channel waveguides were fabricated by ion exchange. The feasibility of sodium-silver and sodiron-potassium ion exchange was demonstrated. The influence of the process parameters on passive and active optical properties of the films was studied and straight channel waveguides with Gaussian mode profiles were obtained by the sodium-silver route.
2003
Germania
Alumina
Composition effects
Erbium
Light amplifiers
Semiconducting aluminum compounds
Semiconducting germanium compounds
Semiconducting glass
Semiconducting silicon compounds
Semiconductor doping
Silica
Sol-gels
Thermal effects
Optical waveguides
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/19984
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