he paper describes the application of X-ray photoelectron spectroscopy (XPS) based method to quantify changes in the electric dipole formed at the metal/dielectric interface following heat treatments of metal-oxide-semiconductor (MOS) stack in different environments. The presented results on Me (Me = Au, Ni)/dielectric (dielectric = HfO(2), LaAlO(3)) evidence the oxygen vacancies generated in dielectric contribute to the effective work function changes.
Effect of heat treatments on electric dipole at metal/high-k dielectric interfaces measured by in situ XPS
Sabina Spiga;
2009
Abstract
he paper describes the application of X-ray photoelectron spectroscopy (XPS) based method to quantify changes in the electric dipole formed at the metal/dielectric interface following heat treatments of metal-oxide-semiconductor (MOS) stack in different environments. The presented results on Me (Me = Au, Ni)/dielectric (dielectric = HfO(2), LaAlO(3)) evidence the oxygen vacancies generated in dielectric contribute to the effective work function changes.File in questo prodotto:
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