We describe an analytical method to calculate the strain field and the corresponding band gap modulation induced in a quantum well by a surface stressor of arbitrary shape. In this way, it is possible to engineer the confinement potential of different strained nanostructures based on patterned heterojunctions. Band gap modulations up to 130-140 meV are predicted for suitably designed II-VI/III-V and III-V/III-V heterostructures.
Engineering the strain field for the control of quantum confinement: An analytical model for arbitrary shape nanostructures
M Mazzer;M De Giorgi;E Molinari
1998
Abstract
We describe an analytical method to calculate the strain field and the corresponding band gap modulation induced in a quantum well by a surface stressor of arbitrary shape. In this way, it is possible to engineer the confinement potential of different strained nanostructures based on patterned heterojunctions. Band gap modulations up to 130-140 meV are predicted for suitably designed II-VI/III-V and III-V/III-V heterostructures.File in questo prodotto:
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