We have synthesized the HgGa2Te system in two different forms showing cubic and tctragonal symmetry, respectively. Single crystals of alpha-HgGa2 Te 4 suitable for X-ray investigations were obtained by crystallization of the polycrystalline compound using KBr as flux. The X-ray analysis showed a cubic blende-type structure with cations and vacancies disordered on the metallic sites, in agreement with the model proposed by Hahn. Single crystals of beta- HgGa2Te4 were prepared by chemical vapour deposition. The x-ray structural investlgation indicated a partially ordered defect chalcopyrite structure.

CRYSTAL-GROWTH AND X-RAY STRUCTURAL INVESTIGATION OF 2 FORMS OF HGGA2TE4

AGOSTINELLI E;GASTALDI L;VITICOLI S
1985

Abstract

We have synthesized the HgGa2Te system in two different forms showing cubic and tctragonal symmetry, respectively. Single crystals of alpha-HgGa2 Te 4 suitable for X-ray investigations were obtained by crystallization of the polycrystalline compound using KBr as flux. The X-ray analysis showed a cubic blende-type structure with cations and vacancies disordered on the metallic sites, in agreement with the model proposed by Hahn. Single crystals of beta- HgGa2Te4 were prepared by chemical vapour deposition. The x-ray structural investlgation indicated a partially ordered defect chalcopyrite structure.
1985
chalcopyrite
XRD
Structure
Chemical Vapour deposition
single crystal
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/200095
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