We present results on the optical detection of surface states in GaAs(110)and GaP(110)by the method of the fractional change of external reflectivity. Optical transitions are observed at ~3.1 eV m GaAs(110) and ~3.4 eV in GaP. A comparison with existing theories suggests a rotational relaxation model for the surface, with partial relaxation for GaAs(110) and full relaxation for GaP(110).
Optical detection of surface states in GaAs(110) and GaP(110)
Selci;
1980
Abstract
We present results on the optical detection of surface states in GaAs(110)and GaP(110)by the method of the fractional change of external reflectivity. Optical transitions are observed at ~3.1 eV m GaAs(110) and ~3.4 eV in GaP. A comparison with existing theories suggests a rotational relaxation model for the surface, with partial relaxation for GaAs(110) and full relaxation for GaP(110).File in questo prodotto:
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