We present an 'on lattice' Monte Carlo study of defect clustering in a Si matrix. The simulations are based on local interaction models, which allows us to reliably include the energetics of defects obtained by tight binding molecular dynamic calculations. In particular the dependence of cluster stability and reactivity on cluster size and geometrical configuration is considered. Proper accelerated algorithms have been implemented in order to extend simulations to macroscopic time scales. Our simulations show that the stability of specific cluster configurations strongly affects the kinetic evolution of the defect ensemble

Role of cluster size and topology on the ripening of defect aggregates in crystalline Si

La Magna Antonino;
1999

Abstract

We present an 'on lattice' Monte Carlo study of defect clustering in a Si matrix. The simulations are based on local interaction models, which allows us to reliably include the energetics of defects obtained by tight binding molecular dynamic calculations. In particular the dependence of cluster stability and reactivity on cluster size and geometrical configuration is considered. Proper accelerated algorithms have been implemented in order to extend simulations to macroscopic time scales. Our simulations show that the stability of specific cluster configurations strongly affects the kinetic evolution of the defect ensemble
1999
Istituto per la Microelettronica e Microsistemi - IMM
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/200452
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